Title:
THERMAL TYPE INFRARED SENSOR AND THERMAL TYPE INFRARED ARRAY ELEMENT
Document Type and Number:
Japanese Patent JP2000230857
Kind Code:
A
Abstract:
To raise the numerical aperture of a thermal type infrared sensor and also the production yield of a thermal type infrared array element.
A semiconductor substrate 31 has a hollow 32 on which a diaphragm 33 having 8 beams 38 and a body 39 is formed. On the beams 38 of the diaphragm 33 a p-type poly-Si 34 and an n-type poly-Si 35 are formed and alternately connected through a wiring 36, a layer insulation layer is formed on the diaphragm 33, a passivation film is formed on the layer insulation layer, a thermal absorption metal layer 37 is formed on the passivation film through an amorphous Si, and four infrared detectors 41 are formed on the diaphragm 33.
Inventors:
MORITA SHINICHI
Application Number:
JP3389999A
Publication Date:
August 22, 2000
Filing Date:
February 12, 1999
Export Citation:
Assignee:
NISSAN MOTOR
International Classes:
H01L35/32; G01J1/02; G01J5/02; G01J5/34; H01L37/00; H01L37/02; (IPC1-7): G01J1/02; G01J5/02; H01L35/32; H01L37/00; H01L37/02
Domestic Patent References:
| JPH03248477A | 1991-11-06 | |||
| JPH1140539A | 1999-02-12 | |||
| JPH04158583A | 1992-06-01 | |||
| JPH05164604A | 1993-06-29 | |||
| JPH09133578A | 1997-05-20 |
Attorney, Agent or Firm:
Junnosuke Nakamura (1 outside)