THERMALLY DECOMPOSED BORON NITRIDE CRUCIBLE AND ITS PRODUCTION

Japanese Patent JPH02279600

A

PURPOSE:To decrease the amt. of BN being peeled after cooling a crucible to be used for growing of a semiconductor single crystal or the like and to prolong the life of the crucible by increasing the bonding strength between the respective walls of a multilayered wall structure of >=3 layers stepwise toward the outside wall. CONSTITUTION:A crucible, which has the multilayered wall structure consisting of an least >=3 layers (the thickness of the respective walls is preferably 2 to 50mum and the wall thickness over the entire part of the crucible is generally 0.5 to 3mm) and the bonding strength between the respective walls is increased stepwisely toward the outside wall, is used as a thermally decomposed boron nitride crucible and for molecular bean epitaxy and liquid sealed Czochralski. The production of this crucible is executed by supplying NH3 and boron halide together with a carrier gas into a reaction chamber, intermittently dropping the pressure within the range of the decomposing pressure of the deposited BN or above and the decomposing pressure +20% stepwisely at 1700 to 2000 deg.C, more preferably 1800 to 1950 deg.C and under 0.1 to 5 Torr, by which the holding time of the respective pressures is changed stepwisely and the BN is deposited on the base body.

JP3772376	GROWTH OF SINGLE CRYSTAL AND DEVICE THEREFOR
JP2735740	PRODUCTION OF SILICON SINGLE CRYSTAL

IHARA KUNIHARU
YADA HIROHIDE
YASUNAGA SANETAKA

JP10014889A

November 15, 1990

April 21, 1989

Click for automatic bibliography generation  

UBE INDUSTRIES

C30B27/02; C30B23/08; C30B35/00; H01L21/203; H01L21/208; (IPC1-7): C30B23/08; C30B27/02; C30B35/00; H01L21/203; H01L21/208

Previous Patent: PRODUCTION OF THERMALLY DECOMPOSED BORON NITRIDE CRUCIBLE

Next Patent: TERMITE CONTROLLING AGENT