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Patent Searching and Data


Title:
THERMOELECTRIC MATERIAL MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2013149651
Kind Code:
A
Abstract:

To provide a thermoelectric material manufacturing method by a spark plasma sintering method, which can inhibit decrease in electrical conductivity σ while decreasing thermal conductivity κ.

In a thermoelectric material manufacturing method, a sintering temperature in a spark plasma sintering method is set at a temperature lower than a melt point of a thermoelectric material powder by 300°C or over. For example, in the case where the thermoelectric material powder is a semiconductor including at least one element selected from a group consisting of Bi and Sb, and at least one element selected from a group consisting of Te and Se, the sintering temperature is selected to be 200-300°C. Moreover, the sintering time is selected to be 4-10 hours. It is preferable that a sintering pressure is 40-100 MPa and an average particle size of the thermoelectric material powder is 30 μm or under.


Inventors:
SAIDA JUN
Application Number:
JP2012006922A
Publication Date:
August 01, 2013
Filing Date:
January 17, 2012
Export Citation:
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Assignee:
TOYOTA IND CORP
International Classes:
H01L35/34; C01B19/04; C01G30/00; H01L35/16
Attorney, Agent or Firm:
Okada International Patent Office