PURPOSE: To provide a thermoelectric material exhibiting satisfactory thermoelectric property at high temperatures and sufficient heat resistance at high temperatures.
CONSTITUTION: A thermoelectric material made mainly of silicon germanium compound with the silicon germanium compound expressed by a chemical formula Si1-xGex (0<x<1) is caused to contain a p-type dopant or an n-type dopant. In this thermoelectric material, a p-type dopant selected from B, Al and Ga is contained. An n-type dopant selected from P, As and Sb is contained. A thermionic element 1 can be formed in which a p-type thermoelectric material containing Fe, Ni or silicide thereof, an n-type thermoelectric material containing Cr, Zr or silicide thereof, a p-type thermoelectric material 5a, and an n-type thermoelectric material 5b are joined by p-n junction or p-n junction through a high temperature electrode.
KOBAYASHI MASAKAZU
KUSHIBIKI KEIKO
