To provide a thin film capacitor with high moisture resistance without reducing a dielectric formation region.

In the thin film capacitor wherein a capacity element A formed by laminating a plurality of electrode layers 2, 4 and a thin film dielectric film 3 on a supporting substrate 1 is entirely coated with either one or both a metallic protective film 5 formed of Ni and a moisture-resistant film 6 consisting of silicon oxide formed by a CVD method, the moisture-resistant film 6 is coated with a protective layer 7 and an external terminal 9 is formed on the metallic protective film 5 exposed from the protective layer 7, the thickness of a film thickness reduced part of the metallic protective film 5 is controlled at 0.6 μm or more and the thickness of a film thickness reduced part of the moisture-resistant protective film is controlled at 2.0 μm or more.