To provide a thin film deposition device high in throughput since the annealing is indispensable in a high permittivity thin film forming device using a solution vaporizing method, but the film forming and the annealing are achieved in different chambers, the thin film must be carried after it is cooled, it takes time in the carriage, the installation area of the device must be large, and there is a possibility of an accident during the carriage.
In a CVD device having a shower head 22 using a solution vaporizing method, a carrying position C, a heating position B and a film forming position A are longitudinally provided in a reaction chamber 20, a wafer is moved to achieve various treatments by elevating/lowering a susceptor 26 to each position, and a cooling stage 38 for cooling the wafer is provided in other chamber than the reaction chamber. The operation is achieved in the order of reception of the water (at the carrying position), preliminary heating (at the heating position), film forming (at the film forming position), annealing (at the heating position), delivery of the wafer (at the carrying position), and cooling of the wafer (at the cooling stage). The shower head is cleaned except when the film is formed.
AMAMIYA TORU
MATSUNAMI TORU
HAYASHI TSUKASA
Next Patent: METHOD FOR FORMING DEPOSITED FILM AND DEVICE THEREFOR