Title:
窒化タングステンの蒸着
Document Type and Number:
Japanese Patent JP2005533178
Kind Code:
A
Abstract:
Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.
Inventors:
Gordon, Roy Gee.
Sue, Sage
Becker, Jill
Sue, Sage
Becker, Jill
Application Number:
JP2004521556A
Publication Date:
November 04, 2005
Filing Date:
July 09, 2003
Export Citation:
Assignee:
The President and Fellows of Harvard College
International Classes:
C07F11/00; C23C16/34; C23C16/455; G02B5/26; G02B5/08; H01L21/28; H01L21/285; H01L21/768; C23C16/44; H01L21/02; (IPC1-7): C23C16/34; G02B5/08; G02B5/26; H01L21/28; H01L21/285
Domestic Patent References:
| JP2001081560A | 2001-03-27 | |||
| JP2002094030A | 2002-03-29 | |||
| JPH09509288A | 1997-09-16 |
Foreign References:
| WO2001099166A1 | 2001-12-27 | |||
| US6539160B2 | 2003-03-25 |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Masaya Nishiyama