Title:
薄膜の成膜方法
Document Type and Number:
Japanese Patent JP5249328
Kind Code:
B2
Abstract:
According to the present invention, a thin film having a desired thickness is formed on an inner sidewall of a step with excellent step coverage in a film forming step and an etching step at least once, respectively. In an embodiment of the present invention, a target material is deposited on a substrate (17) having a concave step (31, 32) having an opening width or opening diameter of 3 μm or less and an aspect ratio of 1 or more. At this time, a film forming method according to the present invention has a first step of depositing a thin film onto a bottom (33) of the step (31, 32) and a second step of forming a film on an inner sidewall (34) of the step (31, 32) by re-sputtering the thin film deposited on the bottom (33) and the pressure in a process chamber in the second step is set lower than that in the process chamber in the first step and the ratio of anode power to cathode power in the second step is set greater than the power ratio in the first step.
Inventors:
Hirayama Hanako
Eisaku Watanabe
Eisaku Watanabe
Application Number:
JP2010519735A
Publication Date:
July 31, 2013
Filing Date:
June 26, 2009
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
C23C14/34
Domestic Patent References:
| JP2005285820A | 2005-10-13 | |||
| JP2002363740A | 2002-12-18 | |||
| JP2004526868A | 2004-09-02 | |||
| JPH111770A | 1999-01-06 | |||
| JP2007197840A | 2007-08-09 |
Attorney, Agent or Firm:
Okabe
Asahi Shinmitsu
Katsumi Miyama
Asahi Shinmitsu
Katsumi Miyama
Previous Patent: RUNNING RAIL APPARATUS
Next Patent: HIGH-INPUT OPTICAL FIBER AND PRODUCTION OF ITS BASE MATERIAL
Next Patent: HIGH-INPUT OPTICAL FIBER AND PRODUCTION OF ITS BASE MATERIAL