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Patent Searching and Data


Title:
THIN FILM MOISTURE SENSITIVE ELEMENT
Document Type and Number:
Japanese Patent JPH03223648
Kind Code:
A
Abstract:

PURPOSE: To obtain a thin film moisture sensitive element characterized by excellent resistance against temperature, chemical and the like, high sensitivity and high-speed response by using a dielectric film comprising a metal oxide film or metal nitride film and a polyimide-based thin film having a specified thickness or less.

CONSTITUTION: In a thin film moisture sensitive element, metal, a moisture sensitive film and metal are formed on an insulating substrate IS in this order. The moisture sensitive film is a dielectric film formed by laminating a metal oxide film or a metal nitride film having the thickness of 2,000 or less and a polyimide-based thin film having the thickness of 1,000 in this order. It is preferable that the thickness of the polyimide-based thin film is 1,000 or less, more preferably 500 or less, so that the desorption of moisture in the entire thin film readily occurs. The polyimide-based thin film on the metal oxide film or the metal nitride film having the thickness of 2,000 or less has high dielectric strength.


Inventors:
MURATA MAKOTO
KAMIKITA MASAKAZU
Application Number:
JP16073890A
Publication Date:
October 02, 1991
Filing Date:
June 19, 1990
Export Citation:
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Assignee:
KANEGAFUCHI CHEMICAL IND
International Classes:
G01N27/12; B32B9/00; C08G73/10; G01N7/00; G01N7/22; (IPC1-7): B32B9/00; C08G73/10; G01N7/22; G01N27/12
Attorney, Agent or Firm:
Akaoka Mio