Title:
THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY, AND SCREEN DISPLAY DEVICE AND PLANAR SENSOR USING THE SAME
Document Type and Number:
Japanese Patent JP2022178162
Kind Code:
A
Abstract:
To provide a bottom gate type organic/inorganic hybrid thin film transistor having excellent transistor characteristics and high flexibility.SOLUTION: A thin film transistor includes: an insulating substrate; a gate electrode formed on the insulating substrate; a gate insulating layer formed of one or more films formed on the gate electrode; an inorganic semiconductor layer formed on the gate insulating layer; and source/drain electrodes formed on the inorganic semiconductor layer. The gate insulating layer has a first gate insulating layer formed using an organic material and a second gate insulating layer formed using an inorganic material. The second gate insulating layer is formed on a part of the first gate insulating layer. The first gate insulating layer is not in contact with the inorganic semiconductor layer. The second gate insulating layer has a film thickness of 2 nm or more and 50 nm or less, and contacts at least partially the inorganic semiconductor layer.SELECTED DRAWING: Figure 1
Inventors:
IMAMURA CHIHIRO
ITO MANABU
ITO MANABU
Application Number:
JP2021084736A
Publication Date:
December 02, 2022
Filing Date:
May 19, 2021
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
H01L21/336; H01L29/786; H01L51/05; H01L51/30
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