THIN FILM TRANSISTOR MATRIX SUBSTRATE AND ITS PRODUCTION

Japanese Patent JP3680527

B2

PROBLEM TO BE SOLVED: To correct all disconnections and interlayer short circuits of a drain bus line and a gate bus line at inside of a matrix concerning a thin film transistor matrix substrate used for driving liquid crystal display, etc.
SOLUTION: The thin film transistor matrix substrate is constituted to have at least one crossing part among three crossing parts; a crossing part between an auxiliary electrode branched from storage capacity of a gate electrode layer and a drain electrode 4D, a crossing part between the auxiliary electrode and a first electrode formed of the drain electrode 4D layer and a crossing part between the auxiliary electrode ends facing each other across the gate bus line 1 and a second electrode of the drain electrode 4D layer arranged facing to the drain electrode 4D via a gate insulating film. When interlayer short-circuit or disconnection of the bus line is generated, the thin film transistor matrix substrate is corrected by means such as irradiation of the crossing part between the auxiliary electrode and the drain electrode 4D with a laser beam to cause the short circuit and irradiation of the auxiliary electrode with the laser beam to cause cutting.

Yoshiyoshi Ozaki
Atsushi Inoue
Yoshio Dejima
Satoshi Kawai
Kenji Okamoto

JP33755097A

August 10, 2005

December 08, 1997

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Fujitsu Display Technologies Limited

G02F1/136; G02F1/1362; G02F1/1368; G09F9/30; H01L29/786; G02F1/1343; (IPC1-7): G02F1/1368; G02F1/1343; G09F9/30; H01L29/786

JP6308533A
JP416930A
JP4265943A
JP2254419A
JP9113930A
JP9127549A
JP55896A

Masaki Morioka

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