Title:
THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JPH1187714
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor superior in off-characteristics, wherein the occurrence of point-defects in a liquid crystal display device, etc., is suppressed and off-current is reduced. SOLUTION: An amorphous semiconductor film 3a formed on an insulating substrate 2 is crystallized by an excimer laser, for forming a polycrystalline semiconductor film 3b. By implanting impurities while the poly crystalline semiconductor film 3b is shielded with a resist 4, impurity implantation regions 21 and 21 are formed. After the polycrystalline semiconductor film 3b has been made into an island, a gate insulating film 7 is film-formed. Then, the gate insulating film 7 is made more minute by heating, while the impurity implantation regions 21 and 21 are activated, to form a source region 5a and a drain region 6a. Then, between the source region 5a and the drain region 6a, in order to provide offset regions 8 and 9 on the side of the source region 5a and the side of the drain region 6a, respectively, a gate electrode 8 is formed on the gate insulating film 7 which corresponds to the region between both offset regions 9 and 9.
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Inventors:
HATA AKIHIRO
ADACHI MASAHIRO
ADACHI MASAHIRO
Application Number:
JP23600497A
Publication Date:
March 30, 1999
Filing Date:
September 01, 1997
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/20; H01L21/02; H01L21/268; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L29/786; H01L21/20; H01L21/268; H01L21/336; H01L27/12
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)
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