Title:
THIN FILM TRANSISTOR WHICH IS EXCELLENT IN UNIFORMITY AND ORGANIC ELECTROLUMINESCENT ELEMENT USING IT
Document Type and Number:
Japanese Patent JP2004172569
Kind Code:
A
Abstract:
To provide a TFT which is excellent in uniformity by using polycrystalline silicon formed by using SLS crystallization technique.
The thin film transistor is excellent in uniformity and the organic electroluminescent element uses it. In the thin film transistor, a primary crystal grain boundary of polycrystalline silicon does not meet the boundary between a drain region and an active channel region. Therefore, the thin film transistor which is excellent in current characteristic and uniformity can be provided, and thereby can be used in the organic electroluminescent element which is excellent in performance.
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Inventors:
PARK JI YONG
PARK HYE HYANG
PARK HYE HYANG
Application Number:
JP2003274980A
Publication Date:
June 17, 2004
Filing Date:
July 15, 2003
Export Citation:
Assignee:
SAMSUNG SDI CO LTD
International Classes:
G09F9/30; H01L21/20; H01L21/336; H01L21/77; H01L27/12; H01L27/32; H01L51/50; H01L29/04; H01L29/786; (IPC1-7): H01L21/336; G09F9/30; H01L21/20; H01L29/786; H05B33/14
Domestic Patent References:
| JP2002110542A | 2002-04-12 | |||
| JPH08330600A | 1996-12-13 | |||
| JPH10254383A | 1998-09-25 | |||
| JP2002110544A | 2002-04-12 | |||
| JP2001274088A | 2001-10-05 |
Foreign References:
| WO2001097266A1 | 2001-12-20 |
Attorney, Agent or Firm:
Takashi Watanabe
Masatake Shiga
Masatake Shiga