Title:
CAPACITANCE TYPE MOISTURE SENSOR
Document Type and Number:
Japanese Patent JP3241190
Kind Code:
B2
Abstract:
PURPOSE: To provide a sensor of which increase of capacitance under the environment of high temperature and high moisture is reduced, and secular stability is favorable, in a capacitance type moisture sensor forming a lower electrode, a polyimide moisture sensing film, and an upper electrode in order on an insulating base plate.
CONSTITUTION: A silicon nitride film 2 is formed on an insulating base plate 1, and a lower electrode 3, a polyimide moisture sensing film 4, and an upper electrode 5 are formed thereon. In this sensor, compared with a sensor formed with no silicon nitride film, increase of capacitance (drift quantity) under the environment of a high temperature and a high moisture can be reduced to about a half.
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Inventors:
Naohiro Fujisawa
Application Number:
JP28777593A
Publication Date:
December 25, 2001
Filing Date:
October 22, 1993
Export Citation:
Assignee:
NOK Co., Ltd.
International Classes:
G01N27/22; (IPC1-7): G01N27/22
Domestic Patent References:
JP419553A | ||||
JP293357A | ||||
JP646851A |
Attorney, Agent or Firm:
Toshio Yoshida
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