Title:
【発明の名称】半導体装置の評価方法
Document Type and Number:
Japanese Patent JP3152951
Kind Code:
B2
Abstract:
PURPOSE:To provide the evaluation method, of a semiconductor device, which can surely detect the generation of a hot carrier phenomenon, a latch-up phenomenon and the like caused by a light-emitting phenomenon regarding the evaluation method, of the semiconductor device, which is suitably used at a development stage. CONSTITUTION:The evaluation method of a semiconductor device by this invention is constituted so as to evaluate the semiconductor device in the following manner: a semiconductor device, for evaluation use, in which an upper-layer interconnection layer 8 composed of a light-shielding material constituting the semiconductor device to be evaluated has been replaced with an upper-layer interconnection layer 8a, for evaluation use, composed of a light-transmitting material is manufactured; and a light-emitting phenomenon at the operation of the semiconductor device for evaluation use is detected by using a photodetector 10.
Inventors:
Hideya Matsuyama
Application Number:
JP4937291A
Publication Date:
April 03, 2001
Filing Date:
March 14, 1991
Export Citation:
Assignee:
富士通株式会社
International Classes:
G01R31/26; G01R31/302; H01L21/66; (IPC1-7): H01L21/66; G01R31/26
Domestic Patent References:
| JP4111441A | ||||
| JP3278441A | ||||
| JP245950A | ||||
| JP63119541A |
Attorney, Agent or Firm:
Yoshito Kitano