Title:
BANK-ERASABLE DOUBLE-METAL FLASH EPROM MEMORY
Document Type and Number:
Japanese Patent JPH0697394
Kind Code:
A
Abstract:
PURPOSE: To provide a FLASH memory which is capable of partially erasing in a portion, selected at a memory matrix without affecting other portions. CONSTITUTION: In a FLASH-EPROM memory, a cell belonging to a common source region 1 in the same row of a matrix is connected to a second source line, formed in a first level metallic layer 4 and a second level metallic layer 6 through a via 5, and a unit cell can be erased through a second source line.
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Inventors:
BAAJINIA NATARE
JIYANRUKA PETOROSHINO
FURABIIO SUKATSURA
JIYANRUKA PETOROSHINO
FURABIIO SUKATSURA
Application Number:
JP32800891A
Publication Date:
April 08, 1994
Filing Date:
November 16, 1991
Export Citation:
Assignee:
SGS THOMSON MICROELECTRONICS
International Classes:
G11C16/02; H01L21/8247; H01L27/115; H01L29/788; G11C17/00; H01L29/792; (IPC1-7): H01L27/115; G11C16/06; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Hiroyuki Mori
Next Patent: FABRICATION OF DOUBLE LAYER GATE PROGRAM ROM