Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0621090
Kind Code:
A
Abstract:
PURPOSE: To enhance photoelectron resistance for a transistor or the like and provide a manufacturing method for a semiconductor device which has enhanced gate with stand voltage.
CONSTITUTION: This manufacturing method comprises a process which forms a device isolation area 15 on a silicon board 11, a process which forms a gate oxide film 16 between the device isolation areas and a heat treatment process which heat-treats the surface of the silicon board 11 and the gate oxide film 16 by pulse-lasering from above the device isolation areas and the gate oxide film 16.
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Inventors:
TSUKAMOTO HIRONORI
Application Number:
JP17423592A
Publication Date:
January 28, 1994
Filing Date:
July 01, 1992
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/324; H01L21/268; H01L21/336; H01L29/78; (IPC1-7): H01L21/336; H01L21/268; H01L21/324; H01L29/784
Attorney, Agent or Firm:
Kunio Yamaguchi (1 person outside)
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