Title:
NONVOLATILE STATIC MEMORY DEVICE AND METHOD FOR OPERATION THEREOF
Document Type and Number:
Japanese Patent JPH0714991
Kind Code:
A
Abstract:
PURPOSE: To provide an improved non-volatile static memory device which does not need a back-up battery. CONSTITUTION: A static memory cell 60 is formed with a pair of MOSFET inverters 62, 64, having cross-linked inputs and outputs. A ferroelectric storage element 96, made of lead titanate zirconate or strontium barium titanate is arranged, so as to be polarized in one of two substitutable directions to be determined by the output voltage of a memory cell. The ferroelectric storage element holds its electric polarization at the time of the power down of the memory cell. At the time of subsequent power up of the memory cell, the ferroelectric storage element biases the memory cell toward one of the two output states of the memory cell, according to its output state at the time of its polarization and power down.
Inventors:
MONTE MANINGU
Application Number:
JP10089694A
Publication Date:
January 17, 1995
Filing Date:
May 16, 1994
Export Citation:
Assignee:
MICRON SEMICONDUCTOR INC
International Classes:
G11C14/00; H01L21/8244; H01L21/8246; H01L21/8247; H01L27/105; H01L27/11; H01L27/115; H01L29/78; H01L29/786; H01L29/788; H01L29/792; (IPC1-7): H01L27/105; G11C14/00; H01L21/8244; H01L27/11; H01L29/786; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kyozo Yuasa (6 people outside)