Title:
【発明の名称】レジスト構造物の製法
Document Type and Number:
Japanese Patent JP2991804
Kind Code:
B2
Abstract:
High-resolution resist structures with steep edges are produced using standard equipment, in particular even in the case of critical via levels, if a photoresist layer consisting of a polymer containing chemically reactive groups and a photoactive component based on diazo ketone or quinone diazide is deposited on a substrate, the photoresist layer is exposed to an image, the exposed photoresist layer is treated with a polyfunctional organic compound containing functional groups which are capable of chemically reacting with the reactive groups of the polymer, a flood exposure is then carried out, the photoresist layer exposed in this way is treated with a metal-containing organic compound having at least one functional group which is capable of chemically reacting with the reactive groups of the polymer, and the photoresist layer treated in this way is etched in an oxygen-containing plasma.
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Inventors:
REKAI ZECHI
HORUSUTO BORUNDERUFUAA
EFUA RITSUSERU
RAINAA ROISHUNAA
MIHIAERU ZEBARUTO
HERUMUUTO AANE
JIIKUFURIITO BIRUKURE
HORUSUTO BORUNDERUFUAA
EFUA RITSUSERU
RAINAA ROISHUNAA
MIHIAERU ZEBARUTO
HERUMUUTO AANE
JIIKUFURIITO BIRUKURE
Application Number:
JP10378391A
Publication Date:
December 20, 1999
Filing Date:
April 08, 1991
Export Citation:
Assignee:
JIIMENSU AG
International Classes:
G03F7/38; G03F7/20; G03F7/26; G03F7/36; H01L21/027; (IPC1-7): G03F7/38; G03F7/36; G03F7/38; H01L21/027
Domestic Patent References:
| JP62165650A | ||||
| JP247659A |
Attorney, Agent or Firm:
Iwao Yamaguchi