Title:
【発明の名称】基板上への窒化けい素及び二酸化けい素フイルムの熱デポジシヨン法
Document Type and Number:
Japanese Patent JPH03504618
Kind Code:
A
Abstract:
A thermal CVD process for forming silicon nitride-type or silicon dioxide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane and at least one other reactant gas into a CVD reaction zone containing said substrate on which either a silicon nitride-type or silicon dioxide-type film is to be formed; (b) maintaining the temperature of said zone and said substrate from about 450 DEG C. to about 900 DEG C.; (c) maintaining the pressure in said zone from about 0.1 to about 10 Torr; and (d) passing said gases into contact with said substrate for a period of time sufficient to form a silicon nitride-type or silicon dioxide-type film thereon.
Inventors:
Dolly, Thomas S
Application Number:
JP50682689A
Publication Date:
October 09, 1991
Filing Date:
May 22, 1989
Export Citation:
Assignee:
Olin Corporation
International Classes:
B05D5/12; B05D7/24; C03C17/22; C03C17/245; C23C16/34; C23C16/40; C23C16/42; C23C16/46; C23C16/52; (IPC1-7): B05D5/12; B05D7/24; C23C16/42; C23C16/46; C23C16/52
Attorney, Agent or Firm:
Chika Takagi (2 outside)