Title:
【発明の名称】光電変換装置及び密着型イメージセンサ
Document Type and Number:
Japanese Patent JP3320335
Kind Code:
B2
Abstract:
A photoelectric conversion device and an image sensor having a plurality of photodetectors and peripheral circuits, configured with MOS transistors, which are integrally formed on a semiconductor substrate. In the peripheral circuits, including a MOS operational amplifier, for outputting electric signals obtained from the photodetectors to outside, a source follower using an n-channel MOS transistor and a source follower using a p-channel MOS transistor are formed subsequent to the MOS operational amplifier. Output from the MOS operational amplifier enters the gate of the source follower of the n-channel MOS transistor, output from the source follower of the n-channel MOS transistor enters the gate of the source follower using a p-channel MOS transistor, and output from the source follower of the p-channel MOS transistor enters a negative input terminal of the MOS operational amplifier as well as is outputted to outside to drive an external load.
Inventors:
Koji Sawada
Kai Kozuka
Kai Kozuka
Application Number:
JP14219297A
Publication Date:
September 03, 2002
Filing Date:
May 30, 1997
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L27/146; H01J40/14; H01L31/02; H04N5/335; H04N5/355; H04N5/365; H04N5/369; H04N5/374; (IPC1-7): H01L27/146; H04N5/335
Domestic Patent References:
| JP6417469A | ||||
| JP5102742A | ||||
| JP63180227A |
Attorney, Agent or Firm:
Johei Yamashita