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Title:
【発明の名称】光電子ビーム変換素子
Document Type and Number:
Japanese Patent JP2597550
Kind Code:
B2
Abstract:
PURPOSE:To contrive to be able to easily generate an electron beam with an optical signal by a method wherein light is incident through an opening part provided on a substrate side and reverse voltage is applied to a p-n junction. CONSTITUTION:A photoelectron beam conversion element includes a semiconduc tor substrate (P-type Si substrate) 1 having a p-n junction 4 formed between an n-type region 3 and a p-type region and an opening part 9 is provided on the semiconductor substrate side. For example, plural pieces of photoelectron beam conversion elements MEBSs are provided with a common transparent electrode 10 on the input side of light L, while a common electrode 8 is provided on the n-type region on an electron beam EB emitting side and the MEBSs respectively have opening parts 911, 912...corresponding to electron beam sources. Reverse voltage smaller slightly than voltage to generate an electron avalanche is applied between the common transparent electrode 10 and the common electrode 8 and the emission of each electron beam is so contrived as to generate when light is inputted in the opening part on the substrate side corresponding to the electron beam source. That is, light is incident, reverse voltage is applied to the p-n junction and by generating an electron beam, the electron beams can be easily generated with an optical signal.

Inventors:
Miyawaki Mamoru
Yukio Masuda
Ryuichi Arai
Nobutoshi Mizusawa
Yasuhiko Ishiwata
Hitoshi Oda
Application Number:
JP14123486A
Publication Date:
April 09, 1997
Filing Date:
June 19, 1986
Export Citation:
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Assignee:
Canon Inc
International Classes:
H01L31/0248; H01J1/30; H01J1/34; H01L31/00; H01L31/09; H01L31/10; (IPC1-7): H01J1/34; H01J1/30
Domestic Patent References:
JP5023168A
JP62299089A
Attorney, Agent or Firm:
Yoshikazu Tani



 
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