Title:
FORMATION OF OHMIC ELECTRODE
Document Type and Number:
Japanese Patent JPS6045018
Kind Code:
A
Abstract:
PURPOSE:To obtain an electrode having low contact resistance, and moreover having uniform contact by a method wherein an insulating film at an opening part for the injection of a current is etched leaving slight thickness, and after the remaining insulating film is etched, the surface of an exposed semiconductor substrate is etched slightly, and a metal film is adhered thereon. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1 having a high concentration P type or N type layer on the surface. Then a mask consisting of a photo resist film 3 to provide an opening part 4 for the injection of a current in the insulating film 2 is formed, and etching of the insulating film 2 is performed using the photo resist film thereof as a mask. At this time, etching of the insulating film 2 is performed incompletely to leave the film thin. After then, exfoliation of the photo resist 3 is performed using an oxygen plasma process to generate scarcely a resist remnant in the opening part 4. After the insulating film 2 is removed according to a proper selectively etching liquid not to corrode the semiconductor substrate 1 in succession, the surface of the semiconductor substrate 1 is etched slightly, and after a metal film 5 for ohmic contact is adhered, heat treatment is performed, and an ohmic electrode is formed.
Inventors:
ISODA YOUICHI
Application Number:
JP15271883A
Publication Date:
March 11, 1985
Filing Date:
August 22, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/28; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Uchihara Shin