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Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPS5952860
Kind Code:
A
Abstract:

PURPOSE: To enable a test at high speed by converting the leakage currents of an input terminal into voltage and judging the magnitude of leakage currents by a voltage comparator by setting up a specific electrode and a resistance region on a substrate respectively.

CONSTITUTION: The first electrodes 12, 15, 18 for extracting external terminals, the resistance regions 11, 14, 17, one ends thereof are connected electrically to these electrodes, and the second electrodes 13,16, 19 to which the other ends of said resistance regions fitted on a scribe line 20 on the substrate are connected are set up on the substrate for the semiconductor integrated circuit device. When minute currents from the electrode such as the electrode 15 are intended to be measured, a terminal for inspection is also brought into contact with the test pad 16 as well as the electrode 15, a voltage source is connected to the test pad 16, and a voltmeter is connected previously to the electrode 15. When flow-in or flow-out currents from the electrode 15 are larger than prescribed values, a voltage drop becomes more than the prescribed one by the diffusion resistor 14, a volage value in the electrode 15 is made to differ from that in the test pad 16, and currents can be measured by measuring the voltage of the electrode 15.


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Inventors:
HAYAMIZU SADAHIRO
Application Number:
JP16551382A
Publication Date:
March 27, 1984
Filing Date:
September 20, 1982
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/66; G01R31/316; H01L21/822; H01L27/00; H01L27/04; (IPC1-7): H01L21/66; H01L27/00
Attorney, Agent or Firm:
Shinichi Kusano