Title:
【発明の名称】ダイオードおよびその製造方法
Document Type and Number:
Japanese Patent JP2003531497
Kind Code:
A
Abstract:
The invention relates to a diode that is provided with at least one trench (20) in the semiconductor substrate and one insulation (13) on the surface of the semiconductor substrate so that the depletion region of the diode is limited by the trench (20), and the surface via which an electrode (9) is directly contacted with a diffusion region (7) is limited by the insulation (13). The inventive diode is further characterized in that the expansion of the depletion region, and thus the surface capacity of the diode, and the size of the electrode (9) are decoupled from each other. The lateral expansion of the depletion region can be chosen independent of the size of the electrode (9).
Inventors:
Ahren, Karlsten
Gable, Reinhard
Picicle, Raimund
Gable, Reinhard
Picicle, Raimund
Application Number:
JP2001577614A
Publication Date:
October 21, 2003
Filing Date:
April 05, 2001
Export Citation:
Assignee:
Infineon Technologies Actien Gezel Shaft
International Classes:
H01L21/329; H01L23/522; H01L29/861; H01L29/417; H01L29/868; (IPC1-7): H01L29/861; H01L21/329
Attorney, Agent or Firm:
Kenzo Hara (3 outside)