Title:
SEMICONDUCTOR GAS SENSOR
Document Type and Number:
Japanese Patent JPS6040945
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor gas sensor, which can detect reducing gas at a normal temperature, by using WO3 as a compound semiconductor of a sensor.
CONSTITUTION: A conductive film 2 comprising In2O3 or the like is evaporated on an insulating substrate 1 as an electrode. A layer 3 of WO3 is evaporated thereon as a compound semiconductor. An electrode 4 using Pd is formed as a catalyst metal. Electrode leads 5 and 6 are extracted from the conductive film 2 and the electrode 4, respectively. Thus, the semiconductor sensor, which can detect reducing gas at a normal temperature can be obtained.
Inventors:
ITOU KENTAROU
KUBO TETSUYA
YAMAUCHI YUKIO
KUBO TETSUYA
YAMAUCHI YUKIO
Application Number:
JP14948383A
Publication Date:
March 04, 1985
Filing Date:
August 16, 1983
Export Citation:
Assignee:
HOCHIKI CO
International Classes:
G01N27/04; G01N27/12; (IPC1-7): G01N27/00
Domestic Patent References:
| JPS5774648A | 1982-05-10 |
Attorney, Agent or Firm:
Takeuchi Susumu
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