PURPOSE: To prevent the insulating film of a capacitor part from destruction at the middle process of manufacture of a semiconductor integrated circuit by a method wherein the circuit is constructed by containing the capacitor part made a conductor as an electrode on one side, a semiconductor substrate as an electrode on another side, and the insulating film as a dielectric.

CONSTITUTION: Field insulating films 2, and an insulating film 3 to act as the dielectric of a capacitor part are formed on a one-conductive semiconductor substrate 1 according to the usual method. A window is opened at a part of the insulating film 3. A first conductor 4 is formed according to polycrystalline silicon containing impurities of the oppositely conductive type from the substrate 1. At this time, the oppositely conductive type impurities in polycrystalline silicon diffuse in the semiconductor substrate 1 to form an oppositely conductive region 8. Then the first conductor 4 is patterned to form the electrode on one side of a capacitor part. The part 3' of the insulating film 3 exposed at patterning time is removed. Then the first conductor 4 is covered with an insulating film 5. Then a second conductor 6 is formed according to polycrystalline silicon containing impurities of the oppositely conductive type from the semiconductor substrate 1. At this time, impurities diffuse in the semiconductor substrate 1 to form source and drain regions 9, and at the same time, the oppositely conductive type region 8 is extended.