MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS5917244

Kind Code:

A

Abstract:

PURPOSE:To obtain the semiconductor device which can form two layers having steep concentration distribution easily with excellent controllability by annealing an amorphous layer generated through ion implantation and restituting the layer into a single crystal. CONSTITUTION:Gallium is diffused to an N type silicon substrate 8 of 10- 20OMEGAcm resistivity for thirty min at a temperature such as 1,100 deg.C, and a P<+> layer 9 of 1X10<19>cm<-3> surface concentration and 2.5mum junction depth is formed. The amorphous layer 11 of approximately 0.4mum depth is formed through the ion implantation of silicon ions only by 5X10<16> ions/cm<2> at 200kev. The amorphous layer 11 is recovered into the single crystal through annealing for thirty min at 600 deg.C, and gallium concentration in a region of the amorphous layer 11 is reduced, and a P<-> layer 12 is formed, thus forming a P<->P<+> layer. Most of gallium in the amorphous layer cannot exist in the silicon substrate because gallium reaching the substrate surface side is dispersed in an annealing atmosphere, thus forming a low concentration layer in gallium. Accordingly, steep distribution by approximately three figures concentration difference is obtained in the concentration of distribution of gallium in the N type silicon substrate acquired.

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