Title:
PREPARATION OF SEMICONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JPS6089915
Kind Code:
A
Abstract:
PURPOSE:To vary the ratio of maximum and minimum between the beams for obtaining desired intensity distribution, by superposing two convex lenses having the same curvature radius on the same plane and by radiating two-peak beams with the use of a system consisting of these lenses or of the region commonly possessed by these lenses onto a semiconductor thin film. CONSTITUTION:A semiconductor thin film formed on a substrate is recrystallized with energy beams to produce a semiconductor thin film. In this production of semiconductor thin films, two lenses L1 and L2 which are superposed on the same plane are utilized in order to obtain a similar effect as obtained by a composite lens L. Laser beams 2 are radiated in parallel relation against the composite lens L, and the beams 2 incident on each of the lenses L1 and L2 are collected to the focuses F1 and F2, respectively. Further, two laser beams 2 whose optical axes are deflected from each other by a distance (d) are formed, so that the ratio of maximum and minimum between these two-peak beams can be varied. Thus a desired distribution of intensity can be obtained.
Inventors:
USUI SETSUO
KANOU YASUO
KANOU YASUO
Application Number:
JP19724183A
Publication Date:
May 20, 1985
Filing Date:
October 21, 1983
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/20; H01L21/268; (IPC1-7): H01L21/263
Attorney, Agent or Firm:
Sada Ito