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Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPS601880
Kind Code:
A
Abstract:

PURPOSE: To enable to obtain a laser oscillation stable in a lateral mode with efficient light enclosure in parallel direction to bonding surface and small threshold current by forming a bent active layer and forming a structure that the clad layer of the bent part is in V shape.

CONSTITUTION: An N type clad layer 11 is grown on an N type substrate 10 which is etched in V groove, which is etched except mesa stripe shape, and an N type clad layer 17, an active layer 16, a P type clad layer 15 and an N type cap layer 14 are crystalline grown. To bent the layer 16, the layer 17 is formed as thin as possible, and to avoid the high threshold current of laser oscillation due to insufficient light enclosure effect, the clad layer is formed of the layer 11 and the layer 17 to obtain a sufficient thickness. Since the bent layer 16 is used, the refractive index can be varied in a direction parallel to the bonding surface, thereby enabling to enclose the light.


Inventors:
HORIKAWA HIDEAKI
WATANABE AKIRA
MATOBA AKIHIRO
KAWAI YOSHIO
Application Number:
JP10913983A
Publication Date:
January 08, 1985
Filing Date:
June 20, 1983
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01S5/00; H01S5/223; (IPC1-7): H01S3/18
Attorney, Agent or Firm:
Hiroshi Kikuchi



 
Next Patent: JPS601881