Title:
FORMING METHOD OF SILICON SINGLE CRYSTAL FILM
Document Type and Number:
Japanese Patent JPS5860697
Kind Code:
A
Abstract:
PURPOSE:To form a silicon single crystal film with few crystal defects and high electrical performance, by depositing a silicon film on a sapphire single crysal substrate partially coated with an amorphous insulator film, and heat-treating the deposited silicon film. CONSTITUTION:Amorphous insulator films 2, e.g. amorphous silicon nitride, are partially deposited to coat a sapphire single crystal substrate 1. An amorphous or polycrystalline silicon film 5 is then deposited thereon, and laser beam is used to heat-treat the silicon crystal film 5 to form a silicon single crystal film. According to the method, a silicon on insulator (SOI) substrate suitable to substrates for ultrahigh integrated circuit devices can be prepared.
Inventors:
EGAMI KOUJI
Application Number:
JP15571081A
Publication Date:
April 11, 1983
Filing Date:
September 30, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C30B1/02; C30B29/06; H01L21/02; H01L21/20; H01L27/12; (IPC1-7): C30B29/06; H01L21/18
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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