Title:
PRODUCTION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5913694
Kind Code:
A
Abstract:
PURPOSE:To prevent cracking in a formed crystal, by moving a crucible downward and disconnecting the grown crystal from the surface of melt upon ending of crystal pulling. CONSTITUTION:A seed crystal is brought into contact with a heated and molten melt stored in a crucible 14, and the seed crystal is pulled, whereby a single crystal 12 is grown and formed. The crucible 14 is moved downward to disconnect the grown crystal from the surface of the melt upon ending of the crystal pulling. Then, high-frequency electric power is supplied more to the crucible 14 and a reflection plate 15, and the crystal 12 receives just about 44 deg.C temp. difference which is about half the temp. difference in the prior art as shown by the shaded part. The thermal stress in the cooling stage is thus decreased considerably and cracking is prevented.
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Inventors:
USHIZAWA JISABUROU
MATSUMURA SADAO
MATSUMURA SADAO
Application Number:
JP12246682A
Publication Date:
January 24, 1984
Filing Date:
July 14, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B15/00; C30B15/14; H01L21/208; (IPC1-7): C30B15/00
Attorney, Agent or Firm:
Takehiko Suzue
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