PURPOSE: To obtain a photoresist pattern high in precision, by forming an amorphous semiconductor film having light absorptivity on a passivated base, coating the film with a photoresist, and projecting light from an exposure light source through a photomask on the photoresist to cause the semiconductor film to absorb the transmitted light.
CONSTITUTION: MOS transistors 1cW1f are formed on a quartz plate 1a, all their surface is passivated with a silicon nitride film 1b to form the passivated base, and the film 1b is coated with the light absorptive amorphous silicon film 10, and further, this film 10 is coated with the photoresist 3. Then, the photomask 5 is registered with the base, and exposure light is projected from an exposure light source from above the mask 5, and the film 10 is caused to absorb the light transmitted through the photoresist 3, thus enhancing adhesion of the photoresist 3, and precision of the pattern by the absence of reflected light and diffused reflected light.
| JP3255301 | DETECTING METHOD FOR POSITION |
| JPS609123 | FORMATION OF PATTERN |
| JPH07123107 | [Title of Invention] Fluid Drop Supply Device |
NAGATA SEIICHI
HOTSUTA SADAKICHI
KAWASAKI KIYOHIRO
SAITOU HIROKI
