Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6021539
Kind Code:
A
Abstract:
PURPOSE:To realize high density loading and high speed operation by providing a process for forming a narrow and deep element isolation region having a low specific dielectricity. CONSTITUTION:A film made of Al or Al2O3 is formed on a semiconducltor substrate 20 and a resist pattern 22 is also formed on the film 21 by the electron beam exposure method. With the resist pattern 22 used as the mask, the film 21 is anisotropically etched by the dry etching method. Next, the resist pattern 22 is removed and with the film 21 used as the mask, the semiconductor substrate 20 is anisotropically etched by the reactive ion etching method. For example, since the etching selection ratio of Al and Si substrate can be set to 70 times or more in the reactive ion etching utilizing CCl2F4 and the anisotropic etching is also possible, width of groove 23 can be set as narrow as several hundreds nm as in the case of the clearance of film 21 and depth of groove 23 can be set as deep as several mum.
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Inventors:
SUYAMA SHIROU
TANIUCHI TOSHIAKI
SERIKAWA TADASHI
TANIUCHI TOSHIAKI
SERIKAWA TADASHI
Application Number:
JP12798683A
Publication Date:
February 02, 1985
Filing Date:
July 15, 1983
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L29/78; H01L21/3065; H01L21/31; H01L21/331; H01L21/76; H01L21/764; H01L29/73; H01L29/732; (IPC1-7): H01L21/95; H01L29/72; H01L29/78
Domestic Patent References:
| JPS57187951A | 1982-11-18 | |||
| JPS5818938A | 1983-02-03 |
Attorney, Agent or Firm:
Junnosuke Nakamura