PURPOSE: To obtain gaseous fluorosilane of high purity by passing crude gaseous fluorosilane contg. silane compounds contg. chlorine as impurities through an activated carbon layer to remove said impurities.
CONSTITUTION: Crude gaseous fluorosilane represented by formula I (where (n) is an integer of ≥1, and (m) is 0W2n+1) contains silane compound contg. chlorine such as chlorosilane and partially fluorinated fluorochlorosilane in large quantities as impurities. The gaseous fluorosilane is passed through a column packed with activated carbon. Said impurities are removed by adsorption on the activated carbon to reduce the impurity content to ≤ several ppm, and gaseous fluorosilane of high purity for forming a thin film of amorphous silicon fluoride is obtd. Any of SiHF3, SiH2F2 and Si2F6 can be purified by this method.
MARUYAMA KENSAKU
HARADA ISAO
KOTOU NOBUHIKO
| JPS57156317A | 1982-09-27 |