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Patent Searching and Data


Title:
RESIN SEALED TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5934649
Kind Code:
A
Abstract:

PURPOSE: To improve dampproofing by applying an alkyl silicate to a semiconductor element and a lead wire and forming a coating layer through baking when the semiconductor device is sealed with a resin composition.

CONSTITUTION: Methyl silicate, ethyl silicate and these oligomer and the like are made contain as an alkyl silicate group compound. Benzene, toluene, xylene, alcohols, ketones, chloroform, etc. are used as a solvent. The thickness of a coating after application and baking is made 10μm or less in order to obtain the desired concentration of a solution. A baking temperature is at least 100°C or more, preferably, 150W300°C, and the device is treated for several min W several hr. A composition using an epoxy resin as a base is particularly preferable as the resin composition for sealing.


Inventors:
NISHIKAWA AKIO
SUGAWARA YASUHIDE
TSUBOSAKI KUNIAKI
Application Number:
JP14340582A
Publication Date:
February 25, 1984
Filing Date:
August 20, 1982
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
C09D183/00; H01L23/29; H01L23/31; (IPC1-7): C09D3/82
Attorney, Agent or Firm:
Akio Takahashi