PURPOSE: To equalize characteristics, and to improve yield on manufacture by forming a thin-film consisting of a high melting-point metallic silicide on a compound semiconductor substrate, introducing one conduction type impurity, executing heat treatment to form one conduction type region, removing said thin- film from regions except said region and using said residual thin-film as a Schottky type gate electrode.

CONSTITUTION: A tungsten silicide layer 2 is formed on a semi-insulating gallium arsenide substrate 1 while using tungsten and silicon as targets. A resist mask 5 is dissolved and removed, and the ions of silicon as an N type impurity are implanted. An N type region 6 is formed through heat treatment in nitrogen gas. A resist mask 8 is dissolved and removed, and the tungsten silicide layer 2 is etched to shape a gate electrode 2'. Regions except the N type region 6 is covered with a mask and silicon ions are implanted, and the N type region 6 is expanded through heat treatment in nitrogen gas. Regions except source and drain forming regions are covered with a mask, double layers of a gold-germanium layer and gold layer are evaporated and formed, and the gold-germanium/ gold layers are lifted off and removed from the regions except the source and drain regions.