Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6085514
Kind Code:
A
Abstract:
PURPOSE:To obtain highly reliable, fine wirings by embedding thick fluid metal in a recessed part yielding in a wiring layer and heating/hardening thereof when forming a diffused region on the surface layer of a semiconductor substrate, covering the whole surface including the region with an insulating layer, boring minute contact hole corresponding to the diffused region, and making an Al wiring layer adjacent to the diffused region adhere thereto. CONSTITUTION:A diffused region 22 is formed on the surface layer of a semiconductor substrate 21 and the whole surface including the above both is covered with an insulating layer 23. A fine contact hole 24 is bored in the layer 23 corresponding to the region 22. Next, an Al wiring layer 25 which embeds this hole 24 and extends on the layer 23 while contacting with the region 22 is made to adhere. While embedding a recessed part yielded at this time over the hole 24, Ta paste or metal layer 26 obtained by liquefying Ta is made to adhere to the whole surface. After that, the layer 26 is heated and hardened in inactive gas of temperature not less than 400 deg.C and a thick metal layer 27 consisting of Ta is formed in the recessed part. Then, the layer 27 outside the recessed part is removed and the layer 27 is left only in the hole 24 to obtain the Al wiring layer 25.
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Inventors:
SHIMA SHIYOUHEI
Application Number:
JP19262383A
Publication Date:
May 15, 1985
Filing Date:
October 17, 1983
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/3205; H01L21/28; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Noriyuki Noriyuki