Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5917235
Kind Code:
A
Abstract:
PURPOSE:To form a stamp and a groove to the surface of a semiconductor substrate with excellent efficiency by irradiating the rays of light or particle beams of high energy density while transmitting a protecive film formed to the whole or desired section of the surface of the substrate, forming the stamp or the groove to the surface of the substrate and removing the protective film. CONSTITUTION:The silicon oxide film 4 is formed to one surface of the silicon substrate 1 through a vapor growth method or an application method, and laser beams 2 are irradiated. Laser beams 2 transmit the oxide film 4 and reach the substrate 1, and evaporate silicon in a region of the irradiation, and the carved groove 5 is formed. Evaporating silicon and the splashes 3 of the oxide film scattered simultaneously adhere on the oxide film 4 at that time. The whole carving is completed, and the oxide film is removed as shown in the figure by fluoric acid, thus completely removing the splashes 3 adhering on carving tother with the oxide film from the surface of the substrate 1.
Inventors:
SHIMADA MASAO
Application Number:
JP12616782A
Publication Date:
January 28, 1984
Filing Date:
July 20, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/66; H01L21/02; (IPC1-7): H01L21/02
Domestic Patent References:
| JPS5040068A | 1975-04-12 | |||
| JPS50134581A | 1975-10-24 | |||
| JPS5752124A | 1982-03-27 |
Attorney, Agent or Firm:
Uchihara Shin