PURPOSE: To extremely lower the halogen content in a vapor deposition film, by a method wherein the ratio of halide of Ti, Si, Al or B and H2 is brought into a specific range and a reaction gas such as hydrocarbon, CO2, H2, N2 or NH3 is used in high purity with a specific value or more.

CONSTITUTION: Halide of Ti, Si, Al or B is reacted with a reaction gas comprising H2 and N2, hydrocarbon, CO2 or NH3 in a gaseous atmosphere to form a thin film constituted from one kind or more carbide, nitride, carbonitride or oxide of Ti, Si, Al or B and a composite thereof by a chemical vapor deposition method. In this case, the ratio of halide of Ti, Si, Al or B and H2 is adjusted to 0.005W0.1 and the purities of H2 and the reaction gas are brought to 99W99.99%. By this method, the halogen content in the vapor deposition film comes to 1×10-5W1×10-2%.