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Title:
PHOTO SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5988886
Kind Code:
A
Abstract:

PURPOSE: To obtain a photo semiconductor device of high photo coupling efficiency with a single mode fiber and small variation of the efficiency with the variation of ambient temperatures by a method wherein a hole is provided through a member for holding a lens, and a pin provided on a heat sink which holds a photo element is inserted into this hole and fixed.

CONSTITUTION: A plurality of holes are bored through the semi-circular metallic holding member 11, composed of Cu, etc., plated with Au of good wetting property with solder over the surface, the lower semisphere of a spherical lens 10 composed of high refractive index glass is fitted therein, and the lower side surface of the upper semisphere is fixed on the member 11 by means of a low melting point solder glass 12 whose main component is PbO. On the other hand, a semiconductor laser element 20 positioned at the lower surface of the lens 10 is mounted on the heat sink 30 via a member 21 such as a diamond of high thermal conductivity, and a plurality of projecting pins 31 provided in the sink 30 are fixed in another hole provided at the end part of the holding member 11 by means of Sn-Pb series solder 40. Thereafter, the entire surface is covered with a transparent glass surface plate 51, and the end part thereof is supported by a holding metal piece 50.


Inventors:
KAMATA TOORU
Application Number:
JP19855582A
Publication Date:
May 22, 1984
Filing Date:
November 12, 1982
Export Citation:
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Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L33/58; H01S5/00; (IPC1-7): H01L33/00; H01S3/18
Domestic Patent References:
JPS5783081A1982-05-24
JPS5517372B21980-05-10
JPS5742011U1982-03-06
Attorney, Agent or Firm:
Uchihara Shin