Title:
BIPOLAR MONOLITHIC IC
Document Type and Number:
Japanese Patent JPS5932150
Kind Code:
A
Abstract:
PURPOSE:To prevent a parasitic transistor from being produced in a bipolar monolithic IC by providing the third island between the islands to become an element and fixing the potential of the third island to the potential of a substrate. CONSTITUTION:An island 123 is provided between islands 121 and 122, and shortcircuits to a substrate 11 through an N<+> type layer 14, an aluminum layer 15 and a P<+> type layer 16. Accordingly, when a counterelectromotive force is produced at a transistor Q1 which is provided in the island 122 by connecting a coil L to the collector so that the potential at the point A becomes a ground potential or lower, a current flows from the substrate 11 through the island 123 to a parasitic transistor Q2. Accordingly, another transistor (a) which is formed separately from the island 121 is protected. The integration of the element can be largely increased by this configuration.
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Inventors:
MARUTA HIDEICHIROU
Application Number:
JP14291582A
Publication Date:
February 21, 1984
Filing Date:
August 18, 1982
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/331; H01L21/761; H01L29/73; (IPC1-7): H01L29/72
Domestic Patent References:
| JPS5698839A | 1981-08-08 |
Attorney, Agent or Firm:
Takehiko Suzue