Title:
FORMING METHOD FOR ELECTRODE
Document Type and Number:
Japanese Patent JPS5839034
Kind Code:
A
Abstract:
PURPOSE:To form an electrode pattern by lift-off method by forming grooves of electrode pattern on the protective surface under the pattern before forming an electrode material in a semiconductor device. CONSTITUTION:A protective film 5 exposed by a resist film 6 is partly wet etched from the surface with an etchant of fluoric acid series, and overhangs 7, 7,... are formed at the ends of the film 6. Subsequently, aluminum 8 is deposited on the surface of the substrate 1. The film 8 is not almost coated on the side surface of the film 6, the side surface of the film 5 and the overhangs 7, 7, thereby forming air gaps 9, 9,.... The film 8 is slightly etched to completely expose the side surface of the film 6, thereby removing the film 6. As a result, the film 8 is also removed, only the film 8 on the gate electrode 4 and the film 5 remain, becoming the electrodes of the semiconductor device. Since the overhangs are formed at the surface protective film, the electrode material can be readily isolated, thereby enabling the microminiaturization of wire and the like.
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Inventors:
BANDOU JIYUNJI
Application Number:
JP13794581A
Publication Date:
March 07, 1983
Filing Date:
September 01, 1981
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/3205; H01L21/304; H01L21/306; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Takuji Nishino