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Title:
METHOD FOR INTRODUCING GAS IN CHEMICAL VAPOR DEPOSITION METHOD
Document Type and Number:
Japanese Patent JPS60149779
Kind Code:
A
Abstract:

PURPOSE: To form a film having a uniform thickness over the entire surface of a base body in the stage of forming the film by a CVD method on the surface of the base material in a reaction vessel by expanding the sectional area of gaseous low material flow to the same area as the sectional area of the reaction vessel.

CONSTITUTION: A base material 1 to be formed thereon with a film by a CVD is disposed in a reaction vessel 2 and is heated to a prescribed reaction temp. by a heater. A gaseous raw material 4 for forming a film is simultaneously supplied through a nozzle 11 into the vessel. The gaseous raw material is decomposed on the surface of the heated material 1 and is deposited on the surface of said material, thus forming a coating layer thereon. Plural nozzle ports 12 for ejecting spirally gaseous flow 4 are provided on the side face of the nozzle 11 for supplying the material 4. Plural nozzles 13 are otherwise provided on the reaction vessel or a nozzle 14 packed with wool, etc. 16 in an ejecting port 15 having an expanded top end is used. The gaseous raw material 4 flows uniformly distributed over the entire surface of the body 1, thereby forming the film having a uniform thickness over the entire surface of the body 1.


Inventors:
KAYANE MIHARU
OOI TOSHITSUGU
FUJITA FUSAO
Application Number:
JP516284A
Publication Date:
August 07, 1985
Filing Date:
January 13, 1984
Export Citation:
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Assignee:
MITSUI SHIPBUILDING ENG
International Classes:
C23C16/44; C23C16/455; (IPC1-7): C23C16/44
Attorney, Agent or Firm:
Unuma Tatsuyuki



 
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