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Patent Searching and Data


Title:
MANUFACTURE OF SILICON CARBIDE
Document Type and Number:
Japanese Patent JPS5891025
Kind Code:
A
Abstract:

PURPOSE: To inexpensively manufacture high purity SiC powder having favorable physical properties as a starting material for a sintered body in a high yield in large quantities by reacting an inorg. silicon compound contg. halogen with NH3 and more than a specified amount of a carbonaceous substance in a nonoxidizing atmosphere.

CONSTITUTION: An inorg. silicon compound contg. halogen is gasified by heating, introduced into a reaction tube together with gaseous ammonia and a suitable carrier gas, and reacted at a prescribed temp. Si3N4 as a reaction product is captured, and it is reacted with a carbonaceous substance in a nonoxidizing atmosphere. The carbonaceous substance is fed by more than the theoretical amount required to convert the Si3N4 into SiC. The resulting powder is treated under heating in air to remove the excess carbonaceous substance.


Inventors:
TERASE KUNIHIKO
KIJIMUTA HITOSHI
OOTA YUKINORI
Application Number:
JP18683181A
Publication Date:
May 30, 1983
Filing Date:
November 24, 1981
Export Citation:
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Assignee:
ASAHI GLASS CO LTD
International Classes:
C01B31/36; (IPC1-7): C01B31/36
Attorney, Agent or Firm:
Akira Uchida