Title:
【発明の名称】自己整合型コンタクトホールの形成方法及び半導体装置
Document Type and Number:
Japanese Patent JP3116360
Kind Code:
B2
Abstract:
In a semiconductor device that includes a first level conductor layer, a second level conductor layer, and a third level conductor layer, the second level conductor layer being positioned at a level between the first and third level conductor layers, a contact hole for electrically connecting the first and third conductor layers is formed in a self-aligned manner, by utilizing an insulating layer which is formed to cover the second level conductor layer in such a manner that the insulator layer surrounds or confines an area where the contact hole is to be formed.
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Inventors:
Ken Kobayashi
Application Number:
JP17231390A
Publication Date:
December 11, 2000
Filing Date:
June 28, 1990
Export Citation:
Assignee:
NEC
International Classes:
H01L21/768; H01L21/60; H01L21/8242; (IPC1-7): H01L21/768
Domestic Patent References:
| JP60128642A | ||||
| JP63207154A |
Attorney, Agent or Firm:
Seiichi Kuwai