To provide a triaxial magnetic sensor of structure manufacturable in a single chip.
In this triaxial magnetic sensor, a huge magnetoresistive effect element is formed by a plurality of huge magnetoresistive effect element bars connected in series. The magnetoresistive elements 12a-12d of the X-axis sensor are formed on a plane parallel to the surface of the substrate 11. The magnetization direction and sensitivity direction are formed vertically to the longitudinal direction of each of the huge magnetoresistive effect element bars. Y1-axis sensors 12e-12h are formed on a first slope 15a inclined to the surface of the substrate 11. The magnetization direction and sensitivity direction are formed vertically to the longitudinal direction of each of the magnetoresistive element bars and along the first slope 15a. Y2-axis sensors 12i-12l are formed on a second slope 15b inclined with the same angle and in the inverse direction to the first slope 15a. The magnetization direction and sensitivity direction are formed vertically to the longitudinal direction of each of the magnetoresistive element bars, along the second slope 15b.
COPYRIGHT: (C)2007,JPO&INPIT
Masayoshi Omura
Yukio Wakui
Toshiyuki Ohashi
Chihiro Osuka
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Yasuo Asami
Hideo Takahashi
Yoshitaka Takeyama
Eiichi Sobue