To provide a vacuum treatment apparatus capable of easily setting the timing for performing self-cleaning so as to have general versatility, further prolonging the timing and enhancing the production efficiency.
A plasma CVD apparatus 100 can perform self-cleaning by introducing a cleaning gas into a film deposition chamber 1 in which a film deposition treatment to a substrate 4 is carried out. The timing for performing self-cleaning is set within a range where the film deposition operation time ratio Ps, represented by the ratio of the film deposition related working time Tt to the total time of the film deposition related working time Tt and the cleaning related working time Tc, is saturated to an increase of the film deposition treatment amount.
| WO/2013/138069 | METHODS FOR DEPOSITING A TIN-CONTAINING LAYER ON A SUBSTRATE |
| JP2581117 | [Title of Invention] Vapor Deposition Deposition Device |
| JP2003158082 | SUBSTRATE PROCESSOR |
SAKAKI MASAHIRO
UENO MOICHI
KAWAMURA KEISUKE
TAKANO GIYOUMI
| JP2006313934A | 2006-11-16 | |||
| JPH11102897A | 1999-04-13 | |||
| JP2007084908A | 2007-04-05 | |||
| JPH11176714A | 1999-07-02 | |||
| JP2002212734A | 2002-07-31 | |||
| JP2005232490A | 2005-09-02 | |||
| JP2005150258A | 2005-06-09 | |||
| JP2003158281A | 2003-05-30 | |||
| JPH0831752A | 1996-02-02 | |||
| JPH05259083A | 1993-10-08 | |||
| JP2005330566A | 2005-12-02 |
Kunio Ueda