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Title:
VAPOR DEPOSITION APPARATUS
Document Type and Number:
Japanese Patent JP2013204101
Kind Code:
A
Abstract:

To provide a vapor deposition apparatus capable of preventing any thermal degradation in a vapor deposition material, and minimizing the remain of the vapor deposition material.

When a vapor deposition is executed at the necessary minimum temperature of a crucible 22 for the prescribed vapor deposition rate, the amount of a vapor deposition material 24 in the crucible 22 is reduced, and the evaporation amount of the vapor deposition material 24 from the crucible 22 (formation of evaporated particles to be supplied from the crucible 22) is reduced, and then the vapor deposition rate is reduced. Then, if the opening of a flow rate control valve 19 is abruptly increased to maintain the prescribed vapor deposition rate, the target heating temperature of the crucible 22 is raised by the prescribed value, the evaporation amount of the vapor deposition material 24 from the crucible 22 is increased, and the prescribed vapor deposition rate is maintained. Thus, since the target temperature is raised by the prescribed value, thermal degradation in the vapor deposition material 24 can be prevented, while the vapor deposition material 24 can be used to the last, and the remain of the vapor deposition material 24 can be minimized.


Inventors:
DAIKU HIROYUKI
KIKUCHI MASAHIRO
MATSUMOTO YUJI
Application Number:
JP2012075272A
Publication Date:
October 07, 2013
Filing Date:
March 29, 2012
Export Citation:
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Assignee:
HITACHI SHIPBUILDING ENG CO
International Classes:
C23C14/24; H01L51/50; H05B33/06; H05B33/10; H05B33/24; H05B33/26
Domestic Patent References:
JP2007126303A2007-05-24
JP2011195916A2011-10-06
JP2006111926A2006-04-27
JP2012001766A2012-01-05
JP2008169420A2008-07-24
JP2005281808A2005-10-13
Attorney, Agent or Firm:
Morimoto International Patent Office