To provide a vapor phase growth apparatus and a vapor phase growth method for depositing a film on a substrate with uniform thickness.

An MOCVD apparatus 10 comprises a susceptor 21 having a top face 21a placed in a processing chamber 12 and rotating at a speed of 800 rpm or higher, and a shower head 31 having a plurality of gas discharge ports 44, 49 at positions facing the top face 21a of the susceptor 21 and supplying a material gas to the processing chamber 12 through the plurality of gas discharge ports 44, 49. A recess 22 in which a substrate 90 is placed is formed in the top face 21a of the susceptor 21. The substrate is placed so that a clearance is formed between the substrate and the inner wall of the recess 22, and a vapor phase growth face of the substrate is located at a position higher than the top face 21a of the susceptor 21.